P50B4EA MOSFET Transistor

The P50B4EA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P50B4EA transistor as follows.

P50B4EA Transistor Specification

Transistor Code		P50B4EA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		230nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		52nC

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