P3506DD MOSFET Transistor

The P3506DD is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P3506DD transistor as follows.

P3506DD Transistor Specification

Transistor Code		P3506DD
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		241pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS

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