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P3003EDG MOSFET Transistor

The P3003EDG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P3003EDG transistor as follows.

Circuit diagram symbol of the P3003EDG transistor

P3003EDG Transistor Specification

Transistor Code P3003EDG
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 370pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS

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