P2806BD MOSFET Transistor

The P2806BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2806BD transistor as follows.

P2806BD Transistor Specification

Transistor Code		P2806BD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		168pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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