P2803HVG MOSFET Transistor

The P2803HVG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2803HVG transistor as follows.

P2803HVG Transistor Specification

Transistor Code		P2803HVG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0275Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		107pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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