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P2803BMG MOSFET Transistor

The P2803BMG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2803BMG transistor as follows.

Circuit diagram symbol of the P2803BMG transistor

P2803BMG Transistor Specification

Transistor Code P2803BMG
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.028Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 165pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS

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