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P261ALV MOSFET Transistor

The P261ALV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P261ALV transistor as follows.

Circuit diagram symbol of the P261ALV transistor

P261ALV Transistor Specification

Transistor Code P261ALV
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 8.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.019Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 686pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 69nS

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