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P2504EDG MOSFET Transistor

The P2504EDG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2504EDG transistor as follows.

Circuit diagram symbol of the P2504EDG transistor

P2504EDG Transistor Specification

Transistor Code P2504EDG
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0258Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 320pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29nS

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