P2003EV MOSFET Transistor

The P2003EV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2003EV transistor as follows.

P2003EV Transistor Specification

Transistor Code		P2003EV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		261pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		3V

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