P2003BVG MOSFET Transistor

The P2003BVG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2003BVG transistor as follows.

P2003BVG Transistor Specification

Transistor Code		P2003BVG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		132pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

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