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P2003BE MOSFET Transistor

The P2003BE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2003BE transistor as follows.

P2003BE Transistor Specification

Transistor Code		P2003BE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN3X3S
Drain-Source Voltage (Maximum)	V_DS	30V
Gate-Source Voltage (Maximum)	V_GS	20V
Drain Current (Maximum)	I_D	25A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.02Ohm
Power Dissipation (Maximum)	P_D	21W
Drain-Source Capacitance		168pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.5nS

P2003BE MOSFET Transistor Overview

The P2003BE is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PDFN3X3S package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the P2003BE MOSFET

Followings are the key electrical characteristics of the P2003BE MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in P2003BE MOSFET transistor is 30V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the P2003BE MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the P2003BE MOSFET transistor is 25A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of P2003BE MOSFET transistor when the transistor is fully turned on is 0.02 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the P2003BE MOSFET transistor can comfortably transfer into heat without breaking is 21W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the P2003BE MOSFET transistor is 168pF. This value influences to the switching speed of the P2003BE MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the P2003BE MOSFET transistor is switched on is 3.5nS. This is the rate at which P2003BE MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the P2003BE MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of P2003BE MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the P2003BE MOSFET transistor. You can download the official P2003BE MOSFET transistor datasheet to get more infromation about this transistor.

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