P1606BD MOSFET Transistor

The P1606BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1606BD transistor as follows.

P1606BD Transistor Specification

Transistor Code		P1606BD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0185Ohm
Power Dissipation (Maximum)	PD	62W
Drain-Source Capacitance		178pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		99nS

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