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P1603BEBA MOSFET Transistor

The P1603BEBA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1603BEBA transistor as follows.

Circuit diagram symbol of the P1603BEBA transistor

P1603BEBA Transistor Specification

Transistor Code P1603BEBA
Transistor Type MOSFET
Control Channel Type N-Channel
Package PDFN2X2S
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 15W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS

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