P1603BD MOSFET Transistor

The P1603BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1603BD transistor as follows.

P1603BD Transistor Specification

Transistor Code		P1603BD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		159pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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