P1212AT MOSFET Transistor

The P1212AT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1212AT transistor as follows.

P1212AT Transistor Specification

Transistor Code		P1212AT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	128W
Drain-Source Capacitance		831pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS

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