P1203EEA MOSFET Transistor

The P1203EEA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1203EEA transistor as follows.

P1203EEA Transistor Specification

Transistor Code		P1203EEA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	31W
Drain-Source Capacitance		437pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS

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