P1103BVG MOSFET Transistor

The P1103BVG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1103BVG transistor as follows.

P1103BVG Transistor Specification

Transistor Code		P1103BVG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		720pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS

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