P1103BEA MOSFET Transistor

The P1103BEA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1103BEA transistor as follows.

P1103BEA Transistor Specification

Transistor Code		P1103BEA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	37A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	26W
Drain-Source Capacitance		264pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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