P1060ETF MOSFET Transistor

The P1060ETF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1060ETF transistor as follows.

P1060ETF Transistor Specification

Transistor Code		P1060ETF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.77Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		162pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		34nS

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