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P1006BT MOSFET Transistor

The P1006BT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1006BT transistor as follows.

Circuit diagram symbol of the P1006BT transistor

P1006BT Transistor Specification

Transistor Code P1006BT
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 61A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.01Ohm
Power Dissipation (Maximum) PD 83W
Drain-Source Capacitance 224pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29nS

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