P1003EVG MOSFET Transistor

The P1003EVG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1003EVG transistor as follows.

P1003EVG Transistor Specification

Transistor Code		P1003EVG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1218pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22.4nS

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