P0806ATF MOSFET Transistor

The P0806ATF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P0806ATF transistor as follows.

P0806ATF Transistor Specification

Transistor Code		P0806ATF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	57A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		462pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		350nS

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