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P0804BD MOSFET Transistor

The P0804BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P0804BD transistor as follows.

Circuit diagram symbol of the P0804BD transistor

P0804BD Transistor Specification

Transistor Code P0804BD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0085Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 360pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS

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