P06P03LDG MOSFET Transistor

The P06P03LDG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P06P03LDG transistor as follows.

P06P03LDG Transistor Specification

Transistor Code		P06P03LDG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		135pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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