P0660AS MOSFET Transistor

The P0660AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P0660AS transistor as follows.

P0660AS Transistor Specification

Transistor Code		P0660AS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.25Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		126pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS

UXPython is not the creator or an official representative of the P0660AS MOSFET transistor. You can download the official P0660AS MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

2SK2688-01S MOSFET Transistor NDB7060 MOSFET Transistor NDB6060 MOSFET Transistor CEB140N10 MOSFET Transistor 2SK3596-01SJ MOSFET Transistor GFB70N03 MOSFET Transistor IXFA130N10T2 MOSFET Transistor IXTA08N50D2 MOSFET Transistor CEB6601 MOSFET Transistor 2SK3676-01SJ MOSFET Transistor CEB05P03 MOSFET Transistor IXTA90N15T MOSFET Transistor IXTA32P20T MOSFET Transistor 2SK2191 MOSFET Transistor 2SK3511-ZJ MOSFET Transistor 2SK3612-01SJ MOSFET Transistor CEB50N10 MOSFET Transistor BRB50N06 MOSFET Transistor CEB14A04 MOSFET Transistor 2SK3581-01SJ MOSFET Transistor