P062ABD8 MOSFET Transistor

The P062ABD8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P062ABD8 transistor as follows.

P062ABD8 Transistor Specification

Transistor Code		P062ABD8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		504pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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