P0603BDG MOSFET Transistor

The P0603BDG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P0603BDG transistor as follows.

P0603BDG Transistor Specification

Transistor Code		P0603BDG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	68A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		531pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		52nS

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