P0260EIS MOSFET Transistor

The P0260EIS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P0260EIS transistor as follows.

P0260EIS Transistor Specification

Transistor Code		P0260EIS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.4Ohm
Power Dissipation (Maximum)	PD	56W
Drain-Source Capacitance		39pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS

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