OM3N100ST MOSFET Transistor

The OM3N100ST is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the OM3N100ST transistor as follows.

OM3N100ST Transistor Specification

Transistor Code		OM3N100ST
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO257AA
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.4Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

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