OM1N100SA MOSFET Transistor

The OM1N100SA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the OM1N100SA transistor as follows.

OM1N100SA Transistor Specification

Transistor Code		OM1N100SA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8.2Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

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