NX2301P MOSFET Transistor

The NX2301P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NX2301P transistor as follows.

NX2301P Transistor Specification

Transistor Code		NX2301P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO236AB
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	0.4W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.1V

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