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NX1029X MOSFET Transistor

The NX1029X is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NX1029X transistor as follows.

Circuit diagram symbol of the NX1029X transistor

NX1029X Transistor Specification

Transistor Code NX1029X
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOT666
Transistor SMD Code AD
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.33A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.6Ohm
Power Dissipation (Maximum) PD 0.33W
Drain-Source Capacitance 4.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 2.1V
Total Gate Charge 0.26nC

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