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NVTFS4C06N MOSFET Transistor

The NVTFS4C06N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVTFS4C06N transistor as follows.

Circuit diagram symbol of the NVTFS4C06N transistor

NVTFS4C06N Transistor Specification

Transistor Code NVTFS4C06N
Transistor Type MOSFET
Control Channel Type N-Channel
Package WDFN-8
Transistor SMD Code 06WF
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 21A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0042Ohm
Power Dissipation (Maximum) PD 3.1W
Drain-Source Capacitance 841pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 2.2V
Total Gate Charge 11.6nC

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