NVMS5P02R2G MOSFET Transistor

The NVMS5P02R2G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVMS5P02R2G transistor as follows.

NVMS5P02R2G Transistor Specification

Transistor Code		NVMS5P02R2G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC-8
Transistor SMD Code		E5P02
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	7.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1.25V
Total Gate Charge		20nC

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