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NVMFS5833N MOSFET Transistor

The NVMFS5833N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVMFS5833N transistor as follows.

Circuit diagram symbol of the NVMFS5833N transistor

NVMFS5833N Transistor Specification

Transistor Code NVMFS5833N
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8FL
Transistor SMD Code 5833
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0075Ohm
Power Dissipation (Maximum) PD 3.7W
Drain-Source Capacitance 210pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 19.5nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 32.5nC

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