NVMFS5113PL MOSFET Transistor

The NVMFS5113PL is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVMFS5113PL transistor as follows.

NVMFS5113PL Transistor Specification

Transistor Code		NVMFS5113PL
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN5
Transistor SMD Code		V5113L
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	3.8W
Drain-Source Capacitance		505pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		37nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		45nC

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