NVMD6N04 MOSFET Transistor

The NVMD6N04 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVMD6N04 transistor as follows.

NVMD6N04 Transistor Specification

Transistor Code		NVMD6N04
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC-8
Transistor SMD Code		E6N04
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.034Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		156pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		20nC

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