NVMD6N03R2G MOSFET Transistor

The NVMD6N03R2G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVMD6N03R2G transistor as follows.

NVMD6N03R2G Transistor Specification

Transistor Code		NVMD6N03R2G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC-8
Transistor SMD Code		E6N03
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		19nC

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