NVMD4N03 MOSFET Transistor

The NVMD4N03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVMD4N03 transistor as follows.

NVMD4N03 Transistor Specification

Transistor Code		NVMD4N03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC-8
Transistor SMD Code		E4N03
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		8nC

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