NVMD3P03 MOSFET Transistor

The NVMD3P03 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVMD3P03 transistor as follows.

NVMD3P03 Transistor Specification

Transistor Code		NVMD3P03
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC-8
Transistor SMD Code		ED3P03
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	0.73W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		16nC

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