NVJS4151P MOSFET Transistor

The NVJS4151P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVJS4151P transistor as follows.

NVJS4151P Transistor Specification

Transistor Code		NVJS4151P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-363
Transistor SMD Code		VTY
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.067Ohm
Power Dissipation (Maximum)	PD	1.2W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		1.7nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		10nC

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