NVJD4158C MOSFET Transistor

The NVJD4158C is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVJD4158C transistor as follows.

NVJD4158C Transistor Specification

Transistor Code		NVJD4158C
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT-363
Transistor SMD Code		VCD
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	0.27W
Drain-Source Capacitance		19pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		66nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		0.9nC

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