NVGS3136P MOSFET Transistor

The NVGS3136P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVGS3136P transistor as follows.

NVGS3136P Transistor Specification

Transistor Code		NVGS3136P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Transistor SMD Code		VSD
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		274pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		18nC

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