NVGS3130N MOSFET Transistor

The NVGS3130N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVGS3130N transistor as follows.

NVGS3130N Transistor Specification

Transistor Code		NVGS3130N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Transistor SMD Code		VS9
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		169pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.3nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		13.2nC

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