NVD6416AN MOSFET Transistor

The NVD6416AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD6416AN transistor as follows.

NVD6416AN Transistor Specification

Transistor Code		NVD6416AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		6416AN
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.081Ohm
Power Dissipation (Maximum)	PD	71W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		20nC

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