NVD6415AN MOSFET Transistor

The NVD6415AN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD6415AN transistor as follows.

NVD6415AN Transistor Specification

Transistor Code		NVD6415AN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		6415AN
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		37nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		29nC

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