NVD5890NL MOSFET Transistor

The NVD5890NL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5890NL transistor as follows.

NVD5890NL Transistor Specification

Transistor Code		NVD5890NL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		5890NL
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	123A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0037Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		580pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		84nC

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