NVD5867NL MOSFET Transistor

The NVD5867NL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5867NL transistor as follows.

NVD5867NL Transistor Specification

Transistor Code		NVD5867NL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK4
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	43W
Total Gate Charge		15nC

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