NVD5862N MOSFET Transistor

The NVD5862N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5862N transistor as follows.

NVD5862N Transistor Specification

Transistor Code		NVD5862N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK4
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	98A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	115W
Total Gate Charge		82nC

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