NVD5807N MOSFET Transistor

The NVD5807N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5807N transistor as follows.

NVD5807N Transistor Specification

Transistor Code		NVD5807N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		5807N
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.031Ohm
Power Dissipation (Maximum)	PD	33W
Drain-Source Capacitance		96pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		111nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		12.6nC

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